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Samsung delays adoption of 3nm GAAFET technology

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According to industry sources, Samsung has postponed the launch of 3nm semiconductor products that use Gate All Around FET (GAAFET) transistors. The manufacturer himself calls this technological stage 3GAE. Although success was achieved last year, it is now claimed that the South Korean giant will begin production based on 3GAE no earlier than 2024. The original plan called for this to happen much earlier.

According to the source, this means that Samsung, following Intel, will begin to lag significantly behind TSMC in the field of technology. The Taiwanese semiconductor manufacturer expects to master “2nm grade” standards by 2024 using multiple exposure EUV, cobalt contacts and interconnects, germanium-doped channels and other in-house innovations. With Intel technology stalled at the 10nm phase, Samsung is now the only viable alternative to TSMC for cutting edge logic chips.

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